QS6U24 t r ansistor rev.b 1/4 4v drive pch+sbd mos fet QS6U24 z s t r u c t u r e z ex te rna l dime ns ions (unit : mm) silicon p-channel mos fet each lead has same dimensions tsmt6 0.4 (1) (5) (3) (6) (2) (4) 1pin mark 2.8 1.6 1.9 2.9 0.95 0.95 0 ~ 0.1 0.16 0.85 1.0max 0.7 0.3 ~ 0.6 abbreviated symbol : u24 schottky barrier diode z f eatu r es 1) t he QS6U24 combines pch mos f e t w i th a schottky barrier diode in a t s mt 6 p a ckage. 2) low on-st ate resisternce w i th a fast sw itching. 3) low volt age drive (4v). 4) built-in schottky barrier diode has low forw ard volt age. z a p p l i c a t i o n s z inne r c i rc uit load sw itch, dc/dc conversion ? 2 ? 1 (1) (2) (5) (3) (6) (4) (1)anode (2)source (3)gate (4)drain (5)n/c (6)cathode ? a protection diode has been buitt in between the gate and the source to protect against static electricity when the product is in use. use the protection circuit when rated voltages are exceeded. ? 1 esd protection diode ? 2 body diode z packag in g sp ecificatio n s QS6U24 tr 3000 type package code taping basic ordering unit (pieces) z a b solute maximum ratings (t a= 25 c) ? 1 ? 1 parameter v v dss symbol ? 30 v v gss 20 a i d 1.0 a i dp p d 2.0 a i s ? 0.3 a i sp ? 1.2 c tch 150 limits unit parameter symbol limits unit ? 2 ? 3 ? 3 v v rm 25 parameter symbol limits unit v v r 20 a i f 0.7 0.9 p d ? 3 0.7 a i fsm 3.0 c tj 150 p d 1.25 c tstg ? 55 to + 150 drain-source voltage gate-source voltage drain current source current (body diode) channel temperature power dissipation power dissipation continuous pulsed continuous pulsed w/total w/element w/element ? 1 pw 10 s, duty cycle 1% ? 2 60hz ? 1cyc. ? 3 mounted on a ceramic board repetitive peak reverse voltage reverse voltage forward current forward current surge peak junction temperature total power dissipatino range of strage temperature < mosfet > < di > < mosfet and di >
QS6U24 t r ansistor rev.b 2/4 z electrical ch aracteristics (t a= 25 c) parameter symbol i gss y fs min. ?? 10 av gs = 20v, v ds =0v v dd ? 15 v v dd ? 15 v typ. max. unit conditions v (br) dss ? 30 ?? vi d = ? 1ma, v gs =0v i dss ?? ? 1 av ds = ? 30v, v gs =0v v gs (th) ? 1.0 ?? 2.5 v v ds = ? 10v, i d = ? 1ma ? 300 4 0 0 m ? i d = ? 1a, v gs = ? 10v r ds (on) ? 500 7 0 0 m ? i d = ? 0.5a, v gs = ? 4.5v ? 600 8 0 0 m ? i d = ? 0.5a, v gs = ? 4v 0.5 ?? sv ds = ? 10v, i d = ? 0.5a c iss ? 90 ? pf v ds = ? 10v c oss ? 25 16 ? pf v gs =0v c rss ? 9 ? p f f=1mhz t d (on) ? 7 ? ns i d = ? 0.5a t r ? 18 ? ns t d (off) ? 7 ? ns v gs = ? 4.5v t f ? 1.7 ? ns r l =30 ? q g ? 0.6 ? nc r g =10 ? q gs ? 0.4 ? nc v gs = ? 5v q gd ?? nc i d = ? 1.0a ? ? ? ? ? ? gate-source leakage drain-source breakdown voltage zero gate voltage drain current gate threshold voltage static drain-source on-starte resistance forward transfer admittance input capacitance output capacitance reverse transfer capacitance turn-on delay time rise time turn-off delay time fall time total gate charge gate-source charge gate-drain charge ? pulsed < mosfet > v f ?? 0.49 v i f =0.7a i r ?? 200 av r =20v v sd ?? ? 1.2 v i s = ? 0.3a, v gs =0v forward voltage reverse current parameter symbol min. typ. max. unit conditions < body diode (source-drain) > forward voltage drop parameter symbol min. typ. max. unit conditions < di >
QS6U24 t r ansistor rev.b 3/4 z electrical ch aracteristic cu rv es 1 1.5 2 2.5 3 3.5 4 4.5 5 gate-source voltage : ? v gs (v) fig.1 typical transfer characteristics 0.001 0.01 drain current : ? i d (a) 10 0.1 1 ta = 125 c ta = 25 c ta =? 25 c ta = 75 c v ds =? 10v pulsed 0.1 1 1 0 100 1000 drain current : ? i d (a) fig.2 static drain-source on-state resistance vs. drain current ( ) 10000 ta = 125 c ta = 75 c ta = 25 c ta =? 25 c v gs =? 10v pulsed static drain-source on-state resistance : r ds (on) ( m ? ) static drain-source on-state resistance : r ds (on) ( m ? ) 0.1 1 1 0 100 1000 drain current : ? i d (a) fig.3 static drain-source on-state resistance vs. drain current ( ? ) 10000 v gs =? 4.5v pulsed ta = 125 c ta = 75 c ta = 25 c ta =? 25 c 0.1 1 1 0 100 1000 drain current : ? i d (a) fig.4 static drain-source on-state resistance vs. drain current ( ?? ) 10000 v gs =? 4v pulsed static drain-source on-state resistance : r ds (on) ( m ? ) ta = 125 c ta = 75 c ta = 25 c ta =? 25 c 02468 1 0 1 2 1 4 1 6 200 300 400 500 600 700 800 900 1000 1100 gate-source voltage : ? v gs ( v) fig.5 static drain-source on-state resistance vs. gate-source voltage 1200 i d = ? 1.2a i d = ? 0.6a ta = 25 c pulsed static drain-source on-state resistance : r ds (on) ( m ? ) 0.1 1 1 0 100 1000 drain current : ? i d (a) 10000 ta = 25 c pulsed fig.6 static drain-source on-state resistance vs. drain current ( ) static drain-source on-state resistance : r ds (on) ( m ? ) v gs =? 4.0v v gs =? 4.5v v gs =? 10v 0 0.5 1 1.5 2 0.01 0.1 1 source-drain voltage : ? v sd (v) fig.7 reverse drain current vs. source-drain voltage reverce drain current : ? i dr (a) 10 ta = 125 c ta = 75 c ta = 25 c ta =? 25 c v gs = 0v pulsed 0.01 0.1 1 1 0 100 10 100 drain-source voltage : ? v ds (v) fig.8 typical capacitance vs. drain-source voltage capacitance : c (pf) 1000 c iss c oss c rss ta=25 c f=1mh z v gs =0v 0.01 0.1 1 1 0 1 10 100 drain current : ? i d (a) fig.9 switching characteristics switching time : t (ns) 1000 t d(off) t r t d(on) t f ta=25 c v dd = ? 15v v gs = ? 10v r g =10 ? pulsed
QS6U24 t r ansistor rev.b 4/4 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 0 1 2 3 4 5 6 7 total gate charge : qg (nc) fig.10 dynamic input characteristics gate-source voltage : v gs (v) 8 ta=25 c v dd = ? 15v i d = ? 1.2a r g =10 ? pulsed z measu remen t circu i t s fig.11 switching time measurement circuit fig.12 switching waveforms fig.13 gate charge measurement circuit fig.14 gate charge waveforms v gs r g v ds d.u.t. i d r l v dd 90% 90% 90% 10% 10% 10% 50% 50% pulse width v gs v ds t on t off t r t d(on) t r t d(off) v gs i g(const) r g v ds d.u.t. i d r l v dd v g v gs charge q g q gs q gd
appendix appendix1-rev1.1 the products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. notes no technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of rohm co.,ltd. the contents described herein are subject to change without notice. the specifications for the product described in this document are for reference only. upon actual use, therefore, please request that specifications to be separately delivered. application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. rohm co.,ltd. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by rohm co., ltd. is granted to any such buyer. products listed in this document are no antiradiation design. about export control order in japan products described herein are the objects of controlled goods in annex 1 (item 16) of export trade control order in japan. in case of export from japan, please confirm if it applies to "objective" criteria or an "informed" (by miti clause) on the basis of "catch all controls for non-proliferation of weapons of mass destruction.
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